Qualcomm has announced the launch of Snapdragon 835, the successor of Snapdragon 821 which clocks at 2.35 GHz. Along with it, the company also announced its upcoming Quick Charge 4 technology, which will enable users to charge their devices for 5 hours of usage within 5 minutes.
The company is focussing on improving battery life and the charging technology as a chunk of buyers look for better battery and fast charging options these days while buying a phone.
Charge Your Phone For 5 Hours in 5 Minutes
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The US-based multinational has also unveiled its Quick Charge 4 technology along with the new processor, which the company claims will give your device 5 hours of battery life in 5 minutes of charge.
The new charging technology will work 20% faster, with 30% increased efficiency than Quick Charge 3. This doesn’t mean that your device will heat up quickly too, as the new technology will work at 5° C cooler temperatures.
The Quick Charge 4 will also help your device charge 50% battery in 15 minutes or less.
That’s quite clearly a lower percentage if compared to the OnePlus’ Dash charging technology, which has been on the market for several months now.
Below are some of the features that Quick Charge 4 gets over its predecessors.
USB Type-C and USB Power Delivery: In an endeavour to provide quick charging facilities to the masses, Qualcomm standardised the Quick Charge 4 adapters so that it can support multiple devices.
Battery Saver: Implemented to extend battery life and protect the battery, system, cable and connector by measuring voltage current and temperature.
Intelligent Negotiation for Optimum Voltage (INOV): This is an algorithm which helps the system determine optimum power transfer while maximising the efficiency. This helps protect the phone from overheating due to power surges while in charge.
Dual Charge: This technology allows for quick charging via efficient thermal dissipation.
Snapdragon set to become even snappier with the 835 chipset
The company has teamed up with Samsung to develop their next flagship SoC. The Snapdragon 835 will be built on Samsung’s 10 nm FinFET node, which consumes 40 percent less power, hence, giving the processor an overall performance improvement of 27% when compared to its predecessors.
The 10nm FinFET node will also allow for 30% area efficiency due to its smaller size as compared to the previously used 14nm node.
The smaller size doesn’t hamper the performance, rather it frees up more space for the chipset makers to add additional features or just make the device slimmer.
Qualcomm’s Snapdragon 835 and Quick Charge 4 are both due to be available by the end of the second quarter of 2017.